Samsung’s 12-Layer HBM4E Sample Heads to Customers

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Samsung continues to solidify its position in the next-gen HBM market. The company has now begun shipping samples of its new 12-layer HBM4E memory to major global customers. It aims to kick off mass production of this cutting-edge memory solution following customer testing and optimization.
Samsung expands its HBM roadmap with HBM4E
Earlier this year, Samsung became the industry’s first to begin mass production and commercial shipments of HBM4. The company is now expanding its HBM lineup with HBM4E to meet the demands of AI computing and hyperscale infrastructure. It also showcased its HBM4E technology at NVIDIA GTC in March 2026.
Samsung said that its 12-layer HBM4E delivers a stable pin speed of 14 gigabits per second (Gbps) and can scale up to 16 Gbps. The new memory offers more than 20% better performance compared to the HBM4 product. It can also deliver up to 3.6 terabytes per second (TB/s) of memory bandwidth per stack.
HBM4E uses 6th-generation 10-nanometer (nm)-class DRAM process (1c), and in-house 4nm logic base die. It boasts 48GB capacity in its 12-layer version. Samsung plans to expand the lineup with 32GB (8-layer) and 64GB (16-layer) configurations, depending on customer needs.
In comparison with the previous generation, HBM4E delivers 16% better energy efficiency and more than 14% improvement in thermal resistance. These improvements could help next-gen data centers with intensive workloads operate more efficiently.
Meanwhile, Samsung said it has received strong customer feedback on its HBM4, particularly for the performance and energy efficiency. Now, feedback on the HBM4E samples will help determine whether the new memory can successfully step into the mass production phase.
“Following the successful mass production of HBM4, Samsung has once again demonstrated its distinct technological edge with HBM4E,” said Sang Joon Hwang, Executive Vice President and Head of Memory Development at Samsung Electronics. “Through our advanced manufacturing capabilities and preemptive infrastructure investments, we will continue to drive the growth of the global AI memory market.”
















